|FET功能||Logic Level Gate|
|FET类型||MOSFET N-Channel, Metal Oxide|
|Power - Max||68W|
|Rds On（Max）@ Id,Vgs||7 mOhm @ 40A, 10V|
|Vgs（th）（Max）@ Id||3V @ 250µA|
|包裹/箱子||TO-263-3, D²Pak (2 Leads + Tab), TO-263AB|
|工作温度||-65°C ~ 175°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||80A (Ta)|
|输入电容（Ciss）@ Vds||2440pF @ 15V|
|门电（Qg）@ Vgs||33nC @ 5V|
Senior mechanics with professional skills and keen observation, which has a strong ability to solve the problem. The technology is based o...
The inductor (Inductor) is able to convert electrical energy into magnetic energy storage devices. The structure of the inductor is simil...
Analog Device Testing: Test with an op amp. From the "A" point "virtual ground" concept: ∵ Ix = Iref, ∴ Rx = Vs / V0 * Rref, V...
Holtek 8 - bit ControllerHoltek's 8-bit controller, the HT45RM03, is Holtek's new product for the three-phase brushless DC...