|FET功能||Logic Level Gate|
|FET类型||MOSFET N-Channel, Metal Oxide|
|Power - Max||1W|
|Rds On（Max）@ Id,Vgs||13.5 mOhm @ 10A, 10V|
|Vgs（th）（Max）@ Id||1V @ 250µA|
|包裹/箱子||8-SOIC (0.154", 3.90mm Width)|
|工作温度||-55°C ~ 150°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||10A (Ta)|
|输入电容（Ciss）@ Vds||1350pF @ 15V|
|门电（Qg）@ Vgs||60nC @ 10V|
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