|FET类型||MOSFET P-Channel, Metal Oxide|
|Power - Max||1W|
|Rds On（Max）@ Id,Vgs||24 mOhm @ 7.9A, 4.5V|
|Vgs（th）（Max）@ Id||1V @ 250µA|
|包裹/箱子||8-SOIC (0.154", 3.90mm Width)|
|工作温度||-55°C ~ 150°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||7.8A (Ta)|
|输入电容（Ciss）@ Vds||1730pF @ 10V|
|门电（Qg）@ Vgs||55nC @ 4.5V|
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