|FET类型||MOSFET N-Channel, Metal Oxide|
|Power - Max||800mW|
|Rds On（Max）@ Id,Vgs||42 mOhm @ 5.2A, 4.5V|
|Vgs（th）（Max）@ Id||1V @ 250µA|
|包裹/箱子||SOT-23-6 Thin, TSOT-23-6|
|工作温度||-55°C ~ 150°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||5.2A (Ta)|
|输入电容（Ciss）@ Vds||538pF @ 10V|
|门电（Qg）@ Vgs||16nC @ 4.5V|
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