|FET功能||Logic Level Gate|
|FET类型||MOSFET N-Channel, Metal Oxide|
|Power - Max||200W|
|Rds On（Max）@ Id,Vgs||5 mOhm @ 25A, 10V|
|Vgs（th）（Max）@ Id||2V @ 1mA|
|包裹/箱子||TO-263-3, D²Pak (2 Leads + Tab), TO-263AB|
|工作温度||-55°C ~ 175°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||75A (Tc)|
|输入电容（Ciss）@ Vds||3965pF @ 25V|
|门电（Qg）@ Vgs||44.2nC @ 5V|
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