|FET类型||MOSFET N-Channel, Metal Oxide|
|Power - Max||1.7W|
|Rds On（Max）@ Id,Vgs||4.8 mOhm @ 19A, 10V|
|Vgs（th）（Max）@ Id||3V @ 1mA|
|包裹/箱子||8-SOIC (0.154", 3.90mm Width) Exposed Pad|
|工作温度||-55°C ~ 150°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||19A (Ta)|
|输入电容（Ciss）@ Vds||2460pF @ 15V|
|门电（Qg）@ Vgs||62nC @ 10V|
DeltaScan Simulation Test Technology: DeltaScan utilizes almost all digital device pins and the majority of mixed-signal device pins ...
When the PN junction plus reverse voltage, that is, the positive pole of the power supply connected to the N area, the negative then P ...
According to the technical distinction: from its working principle and the core components to distinguish between black and white power is ...
1.2.3 The unit of capacitance The basic unit of capacitance is F (method [pull]). The actual capacitance of the device is usually very...