|FET类型||MOSFET P-Channel, Metal Oxide|
|Power - Max||900mW|
|Rds On（Max）@ Id,Vgs||125 mOhm @ 3.3A, 10V|
|Vgs（th）（Max）@ Id||2V @ 250µA|
|包裹/箱子||8-SOIC (0.154", 3.90mm Width)|
|工作温度||-55°C ~ 150°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||3.3A (Ta)|
|输入电容（Ciss）@ Vds||270pF @ 10V|
|门电（Qg）@ Vgs||10nC @ 10V|
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