|FET类型||MOSFET N-Channel, Metal Oxide|
|Power - Max||74W|
|Rds On（Max）@ Id,Vgs||400 mOhm @ 5.4A, 10V|
|Vgs（th）（Max）@ Id||4V @ 250µA|
|工作温度||-55°C ~ 150°C (TJ)|
|电流 - 连续排水（Id）@ 25°C||9A (Tc)|
|输入电容（Ciss）@ Vds||800pF @ 25V|
|门电（Qg）@ Vgs||43nC @ 10V|
1.8.3 Digital integrated circuits There are many types of digital integrated circuit products. They constitute a variety of logic circui...
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HSDPA mobility: In HSDPA, the introduction of the HS-DSCH channel, the design mechanism is not soft-switching, that is, in ...